The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Sep. 13, 2006
Kyung-in Choi, Chuncheon-si, KR;
Sung-ho Han, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Dae-yong Kim, Yongin-si, KR;
Kyung-in Choi, Chuncheon-si, KR;
Sung-ho Han, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Dae-yong Kim, Yongin-si, KR;
Samsung Electronics Co, Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.