The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2008

Filed:

Aug. 02, 2006
Applicants:

Nobuyuki Nishikawa, Kawasaki, JP;

Hiroshi Minakata, Kawasaki, JP;

Kouji Tsunoda, Kawasaki, JP;

Eiji Yoshida, Kawasaki, JP;

Inventors:

Nobuyuki Nishikawa, Kawasaki, JP;

Hiroshi Minakata, Kawasaki, JP;

Kouji Tsunoda, Kawasaki, JP;

Eiji Yoshida, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface of the tight contact layer, the oxide surface layer being made of oxide of material constituting the tight contact layer. A first conductive layer is disposed on the surface of the oxide surface layer, the first conductive layer being made of a platinum group or alloy which contains a platinum group. When a conductive layer made of metal such as a platinum group is formed on a tight contact layer, coverage and morphology can be prevented from being degraded.


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