The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Apr. 24, 2006
Ying-wen Huang, Hsinchu, TW;
Chi-kuen Lo, Hsinchu, TW;
Lan-chin Hsieh, Hsinchu, TW;
Der-ray Huang, Hsinchu, TW;
Yeong-der Yao, Hsinchu, TW;
Jau-jiu Ju, Hsinchu, TW;
Ying-Wen Huang, Hsinchu, TW;
Chi-Kuen Lo, Hsinchu, TW;
Lan-Chin Hsieh, Hsinchu, TW;
Der-Ray Huang, Hsinchu, TW;
Yeong-Der Yao, Hsinchu, TW;
Jau-Jiu Ju, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.