The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2008

Filed:

Nov. 09, 2006
Applicants:

Hans J. Eisler, Stoneham, MA (US);

Vikram C. Sundar, Stoneham, MA (US);

Michael E. Walsh, Everett, MA (US);

Victor I. Klimov, Los Alamos, NM (US);

Moungi G. Bawendi, Cambridge, MA (US);

Henry I. Smith, Sudbury, MA (US);

Inventors:

Hans J. Eisler, Stoneham, MA (US);

Vikram C. Sundar, Stoneham, MA (US);

Michael E. Walsh, Everett, MA (US);

Victor I. Klimov, Los Alamos, NM (US);

Moungi G. Bawendi, Cambridge, MA (US);

Henry I. Smith, Sudbury, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.


Find Patent Forward Citations

Loading…