The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
Apr. 25, 2006
Nobuaki Teraguchi, Kitakatsuragi-gun, JP;
Nobuaki Teraguchi, Kitakatsuragi-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride-based group III-V compound semiconductor device includes a buffer layer, a first nitride semiconductor layer and a second nitride semiconductor layer successively stacked on a substrate, the first and the second nitride layers having their respective lattice constants aand ain the relation a>a, an ohmic source electrode and an ohmic drain electrode formed on the second nitride layer, and a piezoelectric effect film formed on at least a partial region between the electrodes, wherein the piezoelectric film exerts compressive stress of an absolute magnitude at least equivalent to that of tensile stress applied to the second nitride layer due to the difference (a−a) between the lattice constants of the first and second nitride layers.