The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
Apr. 06, 2005
Toshiro Futatsugi, Hino, JP;
Naoto Horiguchi, Kunitachi, JP;
Ken-ichi Okabe, Akiruno, JP;
Kenichi Hikazutani, Akiruno, JP;
Toshiro Futatsugi, Hino, JP;
Naoto Horiguchi, Kunitachi, JP;
Ken-ichi Okabe, Akiruno, JP;
Kenichi Hikazutani, Akiruno, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of manufacturing semiconductor device comprising forms a first impurity diffusion region as a lower electrode of a capacitor in a first area of a semiconductor substrate by implanting impurities at a first dose; forms a second impurity diffusion region in a second area, at the end part of the semiconductor substrate, by implanting impurities at a second dose; and forms, by a thermal oxidation method, a capacitor insulation film having a first thickness on the first impurity diffusion region and forms an oxide film having a second thickness which is thicker than the first thickness on the second area.