The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
Sep. 11, 2003
Applicant:
Hieronymus Andriessen, Beerse, BE;
Inventor:
Hieronymus Andriessen, Beerse, BE;
Assignee:
Agfa-Gevaert, Mortsel, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/56 (2006.01); C09K 11/88 (2006.01); H01L 31/0296 (2006.01); H01L 31/0336 (2006.01); H01L 31/101 (2006.01); C01B 19/00 (2006.01); C01G 9/08 (2006.01); C01G 11/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.