The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2008
Filed:
May. 04, 2004
Applicants:
Soo Min Lee, Seoul, KR;
Hun Joo Hahm, Kyungki-do, KR;
Young Ho Park, Kyungki-do, KR;
Inventors:
Assignee:
Samsung Electro-Mechanics Co., Ltd., Suwon, Kyungki-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a method of manufacturing a gallium nitride-based (AlInGaN, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.