The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2008

Filed:

Jun. 20, 2007
Applicants:

Jong Hyun Wang, Cheongju-si, KR;

SE Chun Park, Seoul, KR;

Seong Hun Park, Gunsan-si, KR;

Inventors:

Jong Hyun Wang, Cheongju-si, KR;

Se Chun Park, Seoul, KR;

Seong Hun Park, Gunsan-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device of the present invention includes a page buffer having a bit line selecting circuit, a first register, a second register, a data comparing circuit, a first bit line voltage controller, and a second bit line voltage controller. The bit line selecting circuit couples selectively a certain bit line to a sensing node. The first register and the second register store given data. The data comparing circuit compares the data stored in the first register with the data stored in the second register, and transmits the comparison result to the sensing node. The first bit line voltage controller applies a voltage of low level to the bit line in accordance with a voltage level of the data stored in the first register. The second bit line voltage controller applies a selected first voltage of high level to the bit line in accordance with the data stored in the second register.


Find Patent Forward Citations

Loading…