The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Sep. 27, 2004
Hans-peter Löbl, Monschau-Imgenbroich, DE;
Robert Frederick Milsom, Redhill, GB;
Christof Metzmacher, Aachen, DE;
Hans-Peter Löbl, Monschau-Imgenbroich, DE;
Robert Frederick Milsom, Redhill, GB;
Christof Metzmacher, Aachen, DE;
NXP B.V., Eindhoven, NL;
Abstract
In order to provide a resonator structure () in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (); at least one reflector layer () applied or deposited on the substrate (); at least one bottom electrode layer (), in particular bottom electrode, applied or deposited on the reflector layer (); at least one piezoelectric layer (), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (); at least one top electrode layer (), in particular top electrode, applied or deposited on the bottom electrode layer () and/or on the piezoelectric layer () such that the piezoelectric layer () is in between the bottom electrode layer () and the top electrode layer (), it is proposed that at least one dielectric layer () applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electrode layer () and the top electrode layer (). The invention is also concerned with a method of making such resonator structure a its use.