The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Jun. 30, 2006
Eiji Kametani, Yamatotakada, JP;
Yukari Inoguchi, Kitakatsuragi-gun, JP;
Nobuyuki Watanabe, Nara, JP;
Tetsuroh Murakami, Tenri, JP;
Eiji Kametani, Yamatotakada, JP;
Yukari Inoguchi, Kitakatsuragi-gun, JP;
Nobuyuki Watanabe, Nara, JP;
Tetsuroh Murakami, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layerincluding an AlGaInP active layer and a second waferwhich transmits light derived from the active layer. The crystal axes of the epitaxial layerand the second waferare generally aligned with each other and are in the range of −15° to +15° with respect to a lateral face {} of the second wafer. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.