The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2008

Filed:

Jul. 22, 2004
Applicants:

Takayuki Takeuchi, Osaka, JP;

Norishige Nanai, Osaka, JP;

Inventors:

Takayuki Takeuchi, Osaka, JP;

Norishige Nanai, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor of the present invention is a thin film transistor () having a semiconductor layer (), a source region () and a drain region () provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has π-conjugated organic semiconductor molecules as its main component. The π-conjugated organic semiconductor molecules are oriented so that π orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.


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