The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Apr. 27, 2006
Seong Jin Koh, Mansfield, TX (US);
Choong-un Kim, Arlington, TX (US);
Liang-chieh MA, Arlington, TX (US);
Ramkumar Subramanian, Dallas, TX (US);
Seong Jin Koh, Mansfield, TX (US);
Choong-Un Kim, Arlington, TX (US);
Liang-Chieh Ma, Arlington, TX (US);
Ramkumar Subramanian, Dallas, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Abstract
The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion, at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers, one or more nanoparticles attracted to and in contact with the at least one monolayer, and at least one tunneling barrier in contact with the one or more nanoparticles. Typically, the single electron structure or device formed therefrom further comprise a drain, a gate and a source to provide single electron behavior, wherein there is a defined gap between source and drain and the one or more nanoparticles is positioned between the source and drain.