The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Nov. 12, 2005
R. Suryanarayanan Iyer, St. Paul, MN (US);
Sanjeev Tandon, Sunnyvale, CA (US);
Kangzhan Zhang, Fremont, CA (US);
Rubi Lapena, San Jose, CA (US);
Yuji Maeda, Sakae-machi, JP;
R. Suryanarayanan Iyer, St. Paul, MN (US);
Sanjeev Tandon, Sunnyvale, CA (US);
Kangzhan Zhang, Fremont, CA (US);
Rubi Lapena, San Jose, CA (US);
Yuji Maeda, Sakae-machi, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer including silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer including silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.