The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Apr. 27, 2006
Kye-won Maeng, Seoul, KR;
Sung-ryoul Bae, Suwon-si, KR;
Dong-kyun Nam, Seoul, KR;
Tae-jin Kim, Suwon-si, KR;
Kye-Won Maeng, Seoul, KR;
Sung-Ryoul Bae, Suwon-si, KR;
Dong-Kyun Nam, Seoul, KR;
Tae-Jin Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
There is provided a bipolar transistor (with a respective fabrication method) that provides superior noise characteristics and gain diffusion. The fabricating method includes forming a first base region at a collector region, which in turn is formed on a substrate. A first silicon layer is formed on the base region, and a second silicon layer is formed on the first silicon layer using a forming method different from the method used in forming the first silicon layer. An emitter region is then formed from impurities at the base region by performing a thermal process.