The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2008

Filed:

Sep. 21, 2006
Applicants:

Puneet Kohli, Dallas, TX (US);

Manoj Mehrotra, Plano, TX (US);

Jin Zhao, Plano, TX (US);

Sameer Ajmera, Richardson, TX (US);

Inventors:

Puneet Kohli, Dallas, TX (US);

Manoj Mehrotra, Plano, TX (US);

Jin Zhao, Plano, TX (US);

Sameer Ajmera, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over a substrate, forming at least a portion of gate sidewall spacers proximate sidewalls of the gate structure, and subjecting the at least a portion of the gate sidewall spacers to an energy beam treatment, the energy beam treatment configured to change a stress of the at least a portion of the gate sidewall spacers, and thus change a stress in the substrate therebelow.


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