The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Apr. 27, 2006
Applicants:
Shigenori Hayashi, Nara, JP;
Kazuhiko Yamamoto, Osaka, JP;
Inventors:
Shigenori Hayashi, Nara, JP;
Kazuhiko Yamamoto, Osaka, JP;
Assignees:
Panasonic Corporation, Osaka, JP;
Interuniversitair Micro-Elektronica Centrum VZW, Leuven, BE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/587 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
Quick Actions:
Hayashi, Shigenori. (2008). Semiconductor device and method for fabricating the same (U.S. Patent No. 7465618). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7465618
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile