The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Dec. 21, 2005
Gee Sung Chae, Incheon, KR;
MI Kyung Park, Anyang-si, KR;
Gee Sung Chae, Incheon, KR;
Mi Kyung Park, Anyang-si, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed; forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and forming a source electrode and a drain electrode on the active layer.