The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Jan. 04, 2008
Jung-po Chen, Mingjian Township, Nantou County, TW;
Ming-fang Hsu, Banciao, TW;
An-tse Lee, Tucheng, TW;
Chung-ta Cheng, Yonghe, TW;
Chin-tien Yang, Yonghe, TW;
Sheng-li Chang, Jhubei, JP;
Kuo-chi Chiu, Jhubei, TW;
Jung-Po Chen, Mingjian Township, Nantou County, TW;
Ming-Fang Hsu, Banciao, TW;
An-Tse Lee, Tucheng, TW;
Chung-Ta Cheng, Yonghe, TW;
Chin-Tien Yang, Yonghe, TW;
Sheng-Li Chang, Jhubei, JP;
Kuo-Chi Chiu, Jhubei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
An inorganic resist material is provided, which is an incomplete oxide of a phase-change material. The oxygen content in the inorganic resist material is lower than the stoichiometric oxygen content of a complete oxide of the phase-change material, and a general formula of the inorganic resist material is AO, in which A represents the phase-change material, and x is between 5 at. % and 65 at. %. The inorganic resist material can be used to form line patterns or recording pits with size smaller than the exposure light spot by using the laser of conventional lithography process as an exposure source.