The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2008

Filed:

Dec. 22, 2006
Applicants:

Hideya Matsubara, Tokyo, JP;

Shigemitsu Tomaki, Tokyo, JP;

Shinichiro Toda, Tokyo, JP;

Atsunori Okada, Tokyo, JP;

Inventors:

Hideya Matsubara, Tokyo, JP;

Shigemitsu Tomaki, Tokyo, JP;

Shinichiro Toda, Tokyo, JP;

Atsunori Okada, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 1/203 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high frequency filter comprises a first resonator and a second resonator provided inside a layered substrate. The first and second resonators are inductively coupled and capacitively coupled to each other through a first capacitor and a second capacitor connected to each other in parallel. The first capacitor is formed using first and third electrodes and a dielectric layer. The first electrode is connected to the first resonator via a through hole. The third electrode is connected to the second resonator and opposed to the first electrode. The second capacitor is formed using second and fourth electrodes and the dielectric layer. The second electrode is connected to the second resonator via a through hole. The fourth electrode is connected to the first resonator and opposed to the second electrode.


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