The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7462918 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 09, 2008

Filed:

Mar. 01, 2007
Applicants:

Tetsuya Fukuda, Niigata-ken, JP;

Katsuya Kikuiri, Niigata-ken, JP;

Yoshinobu Nakamura, Niigata-ken, JP;

Shigeaki Yamauchi, Niigata-ken, JP;

Inventors:

Tetsuya Fukuda, Niigata-ken, JP;

Katsuya Kikuiri, Niigata-ken, JP;

Yoshinobu Nakamura, Niigata-ken, JP;

Shigeaki Yamauchi, Niigata-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.


Find Patent Forward Citations

Fukuda, Tetsuya. (2008). Pressure sensor having gold-silicon eutectic crystal layer interposed between contact layer and silicon substrate (U.S. Patent No. 7462918). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7462918

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