The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Apr. 25, 2006
Yasuyuki Sahara, Kyoto, JP;
Katsuhiro Ootani, Nara, JP;
Yasuyuki Sahara, Kyoto, JP;
Katsuhiro Ootani, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A first PMIS transistor includes a first active region which is formed on a semiconductor substrate and a first gate electrode which is formed on the first active region and which is connected at one end thereof to a first gate wiring and includes at the other end thereof a first protruding portion protruding at a side opposite to the first gate wiring side from the first active region A first NMIS transistor includes a second active region which is formed on the semiconductor substrate with a space left from the first active region and a second gate electrode which is formed on the second active region and which is connected at one end thereof to the first gate wiring and includes at the other end thereof a second protruding portion protruding at a side opposite to the first gate wiring side from the second active region. A protruding length of the first protruding portion of the first PMIS transistor is greater than a protruding length of the second protruding portion of the first NMIS transistor.