The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Sep. 14, 2005
Joseph William Wiseman, Austin, TX (US);
Joseph William Wiseman, Austin, TX (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods for fabricating semiconductor structures and contacts to semiconductor structures are provided. A method comprises providing a substrate and forming a gate stack on the substrate. The gate stack is formed having a first axis. An impurity doped region is formed within the substrate adjacent to the gate stack and a dielectric layer is deposited overlying the impurity doped region. A via is etched through the dielectric layer to the impurity doped region. The via has a major axis and a minor axis that is perpendicular to and shorter than the major axis. The via is etched such that the major axis is disposed at an angle greater than zero and no greater than 90 degrees from the first axis. A conductive contact is formed within the via.