The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Oct. 30, 2006
Applicants:
Daisuke Sanga, Tokushima, JP;
Hisashi Kasai, Tokushima, JP;
Kazuhiro Miyagi, Tokushima, JP;
Inventors:
Assignee:
Nichia Corporation, Anan-Shi Tokushima, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer () comprises, from the active layer () side, (a) a p-side wide band gap layer () containing a p-type impurity and (b) a three-layer structure () comprising a first p-side nitride semiconductor layer (), a second p-side nitride semiconductor layer (), and a third p-side nitride semiconductor layer ().