The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Oct. 23, 2006
Sang Heon Han, Kyungki-do, KR;
Bang Won OH, Kyungki-do, KR;
Je Won Kim, Kyungki-do, KR;
Hyun Wook Shim, Kyungki-do, KR;
Joong Seo Kang, Kyungki-do, KR;
Dong Ju Lee, Kwangjoo, KR;
Sang Heon Han, Kyungki-do, KR;
Bang Won Oh, Kyungki-do, KR;
Je Won Kim, Kyungki-do, KR;
Hyun Wook Shim, Kyungki-do, KR;
Joong Seo Kang, Kyungki-do, KR;
Dong Ju Lee, Kwangjoo, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.