The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Apr. 13, 2006
Applicants:
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
William French, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Inventors:
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
William French, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon-based light emitting structure is formed as a high density array of light-emitting p-n junctions that substantially increases the intensity of the light emitted in a planar region. The p-n junctions are formed using standard CMOS processing methods, and emit light in response to applied voltages that generate avalanche breakdown and an avalanche current.