The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Jul. 03, 2003
Applicant:
Yoshihiro Izumi, Kashihara, JP;
Inventor:
Yoshihiro Izumi, Kashihara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate insulation film () and a semiconductor layer () are laminated on a gate electrode (); and a source electrode () and a drain electrode () are formed on the semiconductor layer () by having a predetermined interval between their end portions. Each of the source electrode () and the drain electrode () includes a superimposition area (and), and at least one portion of the superimposition area (and) has translucency. This arrangement realizes improvement of photosensitivity (Ip/Id) without causing complication of wiring layout or manufacturing process.