The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2008

Filed:

Jul. 06, 2005
Applicants:

Yasutomi Iwahashi, Yokohama, JP;

Akio Koike, Yokohama, JP;

Inventors:

Yasutomi Iwahashi, Yokohama, JP;

Akio Koike, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 3/06 (2006.01); G02B 1/00 (2006.01); C03B 19/00 (2006.01); C03B 19/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silica glass containing TiO, characterized in that the fluctuation of the refractive index (Δn) is at most 2×10within an area of 30 mm×30 mm in at least one plane. A silica glass containing TiO, characterized in that the TiOconcentration is at least 1 mass %, and the striae pitch is at most 10 μm. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO, and the fluctuation of the refractive index (Δn) is at most 2×10in a plane perpendicular to the incident light direction. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO, wherein the TiOconcentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiOconcentration is at most 0.06 mass % in a plane perpendicular to the incident light direction.


Find Patent Forward Citations

Loading…