The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2008

Filed:

May. 11, 2006
Applicants:

Dong-youn Shin, Daegu, KR;

Tae Su Kim, Daejeon, KR;

Inventors:

Dong-Youn Shin, Daegu, KR;

Tae Su Kim, Daejeon, KR;

Assignee:

LG Chem, Ltd., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

A patterning method comprising (a) providing a substrate having a sacrificial layer made of a first material, partially or totally formed on the substrate; (b) forming pattern grooves, which are free from the first material and have a line width of a first resolution or lower, on the sacrificial layer by using a first means; (c) filling the pattern grooves with a second material by using a second means; and (d) removing the first material present in a remaining sacrificial layer by way of irradiation or heating, wherein the first material has a threshold fluence of less than a threshold fluence of the second material, the first material is removed in step (d) under a dose ranging from the threshold fluence of the first material to that of the second material, and the pattern is formed on the substrate by the second material.


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