The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Aug. 23, 2006
Applicants:
Keiji Fujita, Oita, JP;
Hideshi Miyajima, Yokohama, JP;
Inventors:
Keiji Fujita, Oita, JP;
Hideshi Miyajima, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/00 (2006.01); B08B 6/00 (2006.01); B05C 5/02 (2006.01); H05H 1/24 (2006.01); C23C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction chamber with a component of a gas generated by the sacrifice film, and bakes a second semiconductor substrate on which a predetermined film including the same component as that of the sacrifice film is formed in the preliminarily coated reaction chamber, while irradiating electron beams on the predetermined film to change quality of the predetermined film.