The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Aug. 28, 2007
Kouji Tsunoda, Kanagawa, JP;
Tatsuya Usuki, Kanagawa, JP;
Masao Taguchi, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device has: an isolation region formed on a semiconductor substrate and defining a continuous active region including a select transistor region and a direct tunnel element region; a gate insulating film formed on a channel region of the select transistor region; a tunnel insulating film formed on a partial area of the direct tunnel element region and having a thickness different from a thickness of the gate insulating film; a continuous floating gate electrode formed above the gate insulating film and the tunnel insulating film; an inter-electrode insulating film formed on a surface of the floating gate electrode; a control gate electrode facing the floating gate electrode via the inter-electrode insulating film; and a pair of source/drain regions formed on both sides of the channel region of the select transistor region and not overlapping the tunnel insulating film.