The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Jan. 11, 2005
Kalle Levon, Brooklyn, NY (US);
Arifur Rahman, San Jose, CA (US);
Tsunehiro Sai, New York, NY (US);
Ben Zhao, Brooklyn, NY (US);
Kalle Levon, Brooklyn, NY (US);
Arifur Rahman, San Jose, CA (US);
Tsunehiro Sai, New York, NY (US);
Ben Zhao, Brooklyn, NY (US);
Polytechnic University, Brooklyn, NY (US);
Abstract
Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, V.