The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2008

Filed:

Oct. 28, 2005
Applicants:

John F. Conley, Jr., Camas, WA (US);

Yoshi Ono, Camas, WA (US);

Lisa H. Stecker, Vancouver, WA (US);

Sheng Teng Hsu, Camas, WA (US);

Josh M. Green, Portland, OR (US);

Lifeng Dong, Portland, OR (US);

Jun Jiao, Beaverton, OR (US);

Inventors:

John F. Conley, Jr., Camas, WA (US);

Yoshi Ono, Camas, WA (US);

Lisa H. Stecker, Vancouver, WA (US);

Sheng Teng Hsu, Camas, WA (US);

Josh M. Green, Portland, OR (US);

Lifeng Dong, Portland, OR (US);

Jun Jiao, Beaverton, OR (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A ZnO asperity-covered carbon nanotube (CNT) device has been provided, along with a corresponding fabrication method. The method comprises: forming a substrate; growing CNTs from the substrate; conformally coating the CNTs with ZnO; annealing the ZnO-coated CNTs; and, forming ZnO asperities on the surface of the CNTs in response to the annealing. In one aspect, the ZnO asperities have a density in the range of about 100 to 1000 ZnO asperities per CNT. The density is dependent upon the deposited ZnO film thickness and annealing parameters. The CNTs are conformally coating with ZnO using a sputtering, chemical vapor deposition (CVD), spin-on, or atomic layer deposition (ALD). For example, an ALD process can be to deposit a layer of ZnO over the CNTs having a thickness in the range of 1.2 to 200 nanometers (nm).


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