The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2008

Filed:

Mar. 23, 2007
Applicants:

Charles R. Dart, Austin, TX (US);

Edmund Sutherland Gamble, Austin, TX (US);

Gary Anthony Jansma, Cedar Park, TX (US);

Terence Rodrigues, Austin, TX (US);

Robert Joseph Ruckriegel, Round Rock, TX (US);

Bruce James Wilkie, Georgetown, TX (US);

Inventors:

Charles R. Dart, Austin, TX (US);

Edmund Sutherland Gamble, Austin, TX (US);

Gary Anthony Jansma, Cedar Park, TX (US);

Terence Rodrigues, Austin, TX (US);

Robert Joseph Ruckriegel, Round Rock, TX (US);

Bruce James Wilkie, Georgetown, TX (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system for improving Field Replacement Unit (FRU) isolation in memory sub-systems by monitoring Voltage Regulator Module (VRM) induced memory errors. A comparator compares the output voltage coming from the VRM to memory. If the comparator detects a VRM output voltage transient that is outside a rated threshold, then a counter is increased by one. If the counter exceeds a count threshold, a VRM error is posted. If a memory failure occurs within a predetermined period of time, then the VRM error pinpoints the VRM output voltage transient as being the likely cause of the memory failure.


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