The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Jun. 23, 2005
Jong Ik Park, Seoul, KR;
Yu Seung Kim, Kyungki-do, KR;
Ki Won Moon, Kyungki-do, KR;
Hye Ran OH, Kyungki-do, KR;
Jong Ik Park, Seoul, KR;
Yu Seung Kim, Kyungki-do, KR;
Ki Won Moon, Kyungki-do, KR;
Hye Ran Oh, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.