The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Jul. 10, 2006
Toshimasa Ishigaki, Chiba, JP;
Masahiro Nishizawa, Mobara, JP;
Fumio Takahashi, Mobara, JP;
Hitachi Displays, Ltd., Mobara-shi, JP;
Abstract
The present invention realizes the two-layered resist structure for obtaining a half exposure pattern of high sensitivity and high accuracy and a manufacturing method of a display device which includes thin film transistors which are formed using the two-layered resist. The resist is constituted of five layers, that is, a base film, a cushion layer, an upper-layer resist, a lower-layer resist and a cover film. Thicknesses of these structural members are set such that base film has a thickness of 50 to 100 μm, the cushion layer has a thickness of 10 to 30 μm, the upper-layer resist has a thickness of 0.5 to 1.0 μm, the lower-layer resist has a thickness of 0.5 to 1.0 μm, and the cover film has a thickness of 10 to 30 μm.