The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Dec. 05, 2003
Zhidan LI Tolt, San Jose, CA (US);
Zhidan Li Tolt, San Jose, CA (US);
Other;
Abstract
An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 10/cm. Such an electron source can be modulated with an extra low voltage, emits electrons with high current density and high uniformity, and operates with high energy-efficiency and long lifetime.