The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Jul. 23, 2004
Shunpei Yamazaki, Setagaya, JP;
Hideto Ohnuma, Atsugi, JP;
Tamae Takano, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Hideto Ohnuma, Atsugi, JP;
Tamae Takano, Atsugi, JP;
Toru Mitsuki, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a semiconductor device using such a semiconductor film. The present invention is characterized by heating a semiconductor film due to a heat processing method (RTA method: Rapid Thermal Anneal method) to irradiate light emitted from a lamp light source after crystallizing the semiconductor film by laser light, thereby reducing the ridge.