The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Apr. 19, 2006
Applicants:
Luke J. Mawst, Sun Prairie, WI (US);
Nelson Tansu, Bethlehem, PA (US);
Jeng-ya Yeh, Portland, OR (US);
Inventors:
Luke J. Mawst, Sun Prairie, WI (US);
Nelson Tansu, Bethlehem, PA (US);
Jeng-Ya Yeh, Portland, OR (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or substantially free, of nitrogen disposed between two barrier layers composed of a nitrogen- and indium-containing semiconductor.
Mawst, Luke. (2008). Quantum well lasers with strained quantum wells and dilute nitride barriers (U.S. Patent No. 7457338). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7457338
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile