The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Dec. 07, 2005
Applicants:
Allen Chang, Fremont, CA (US);
Zhinan Wei, San Jose, CA (US);
Inventors:
Allen Chang, Fremont, CA (US);
Zhinan Wei, San Jose, CA (US);
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A circuit and method for controlling a MOSFET based switch that includes two back-to-back FET to block current flow in the OFF state irrespective of the polarity of the voltage differential across the switch. The MOSFET based switch further has a built-in current limit function by sensing the current flow through one of the two MOSFET switches. Furthermore, the bilateral current-limited switch further includes circuitry required for controlling both P type and N type FET in either common drain or common source configuration.