The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Nov. 10, 2005
Masanori Tsutsumi, Souraku-gun, JP;
Masanori Tsutsumi, Souraku-gun, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A reduction of a current capability of a MOS transistor (P) is compensated by dynamically changing a substrate bias of the MOS transistor (P) in response to a fluctuation of the power supply, and thus an operating speed is stabilized automatically. An NMOS transistor (N) generates a current (I) that changes in response to an extent of fluctuation of the power supply voltage, and then the current (I) is converted into a voltage via a resistor (R) to apply a forward bias to a substrate (back gate) of the MOS transistor (P). When the current capability of the MOS transistor (P) is reduced owing to a reduction of the power supply voltage, an adjustment is carried out automatically to lower a threshold voltage of the MOS transistor and thus the operating speed can be compensated.