The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

Sep. 30, 2005
Applicants:

Erwin J. Prinz, Austin, TX (US);

Michael A. Sadd, Austin, TX (US);

Robert F. Steimle, Austin, TX (US);

Inventors:

Erwin J. Prinz, Austin, TX (US);

Michael A. Sadd, Austin, TX (US);

Robert F. Steimle, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A split gate memory cell has a select gate, a control gate, and a charge storage structure. The select gate includes a first portion located over the control gate and a second portion not located over the control gate. In one example, the first portion of the select gate has a sidewall aligned with a sidewall of the control gate and aligned with a sidewall of the charge storage structure. In one example, the control gate has a p-type conductivity. In one example, the gate can be programmed by a hot carrier injection operation and can be erased by a tunneling operation.


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