The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
May. 20, 2005
Hitoshi Takeda, Ichihara, JP;
Syunji Horikawa, Tokyo, JP;
Hitoshi Takeda, Ichihara, JP;
Syunji Horikawa, Tokyo, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A Group III nitride semiconductor light emitting device having a light emitting layer () bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer () having germanium (Ge) added thereto and having a resistivity of 1×10to 1×10Ωcm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.