The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Feb. 28, 2007
Mutsuko Hatano, Tokyo, JP;
Mikio Hongo, Yokohama, JP;
Akio Yazaki, Tokyo, JP;
Mitsuharu Tai, Tokyo, JP;
Takeshi Noda, Mobara, JP;
Yukio Takasaki, Kawasaki, JP;
Mutsuko Hatano, Tokyo, JP;
Mikio Hongo, Yokohama, JP;
Akio Yazaki, Tokyo, JP;
Mitsuharu Tai, Tokyo, JP;
Takeshi Noda, Mobara, JP;
Yukio Takasaki, Kawasaki, JP;
Hitachi Displays, Ltd., Mobara-shi, JP;
Abstract
A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)<25 μs.