The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

Apr. 25, 2006
Applicants:

Richard N. Zare, Stanford, CA (US);

Facundo M. Fernandez, Atlanta, GA (US);

Joel R. Kimmel, Menlo Park, CA (US);

Oliver Trapp, Palo Alto, CA (US);

Inventors:

Richard N. Zare, Stanford, CA (US);

Facundo M. Fernandez, Atlanta, GA (US);

Joel R. Kimmel, Menlo Park, CA (US);

Oliver Trapp, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01D 59/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

By connecting the Bradbury-Nielson gate (BNG) directly to a driver without a transmission line, distortion of the voltage waveform experienced a the BNG are much reduced. Because the magnitude of the modulation defects grows as the applied modulation voltage is increased, Bradbury-Nielson gates with finer wire spacing such as 100 microns, and operating at 10 to 15 V, significantly better signal-to-noise ratios are achieved. HT-TOFMS data were also post processed using an exact knowledge of the modulation defects.


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