The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

Jan. 28, 2005
Applicants:

Ralf Jonczyk, Wilmington, DE (US);

Scott L. Kendall, Lincoln University, PA (US);

James A. Rand, Landenberg, PA (US);

Inventors:

Ralf Jonczyk, Wilmington, DE (US);

Scott L. Kendall, Lincoln University, PA (US);

James A. Rand, Landenberg, PA (US);

Assignee:

Heritage Power LLC, Atlanta, GA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.


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