The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

May. 01, 2006
Applicants:

Kishor Purushottam Gadkaree, Big Flats, NY (US);

Paul Stephen Danielson, Corning, NY (US);

Matthew John Dejneka, Corning, NY (US);

Josef Chauncey Lapp, Corning, NY (US);

Linda Ruth Pinckney, Corning, NY (US);

Inventors:

Kishor Purushottam Gadkaree, Big Flats, NY (US);

Paul Stephen Danielson, Corning, NY (US);

Matthew John Dejneka, Corning, NY (US);

Josef Chauncey Lapp, Corning, NY (US);

Linda Ruth Pinckney, Corning, NY (US);

Assignee:

Corning Incorporated, Corning, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10/° C. of the linear coefficient thermal of expansion of the germanium first layer.


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