The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

Nov. 19, 2004
Applicant:

Masaru Koeda, Muko, JP;

Inventor:

Masaru Koeda, Muko, JP;

Assignee:

Shimadzu Corporation, Kyoto-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 (2006.01); B29D 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substrate is subjected to holographic exposure to a sinusoidal or half-sinusoidal resist pattern corresponding to grating groove thereon. Thereafter, the substrate and the resist pattern are subjected to a first etching step at which they are irradiated with an ion beam obliquely at an angle that is identical to the blaze angle in the presence of CFas an etching gas, whereby they are cut until the height of the resist is about ⅓ of the initial value. Thereafter, the substrate is subjected to a second etching step at which the substrate is irradiated with an ion beam in the direction corresponding to the bisector of the vertex in the presence of a mixture of CFand Oas an etching gas, whereby the substrate is cut until the resist disappears completely to an extent such that some overetching occurs.


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