The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7455565 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 25, 2008

Filed:

Mar. 16, 2006
Applicants:

Francisco Machuca, San Francisco, CA (US);

Zhi Liu, Palo Alto, CA (US);

Inventors:

Francisco Machuca, San Francisco, CA (US);

Zhi Liu, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 9/04 (2006.01); H01J 9/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Improved photocathodes are provided by a fabrication method including steps of wet chemically cleaning the photocathode emission surface (to reduce the level of cleaning-induced surface damage), two stage heat treatment (to complete the cleaning without desorbing nitrogen from the emission surface), followed by activation with Cs only, as opposed to Cs—O. The resulting photocathodes have improved performance (lifetime, brightness, efficiency) compared to conventional photocathodes, and are thus attractive candidates for demanding photocathode applications.


Find Patent Forward Citations

Machuca, Francisco. (2008). Fabrication of group iii-nitride photocathode having cs activation layer (U.S. Patent No. 7455565). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7455565

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