The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Jan. 23, 2007
Pavel Poplevine, Foster City, CA (US);
Annie-li-keow Lum, Milpitas, CA (US);
Andrew Cao, Fremont, CA (US);
Ernes Ho, Sunnyvale, CA (US);
Pavel Poplevine, Foster City, CA (US);
Annie-Li-Keow Lum, Milpitas, CA (US);
Andrew Cao, Fremont, CA (US);
Ernes Ho, Sunnyvale, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A single 4-transistor non-volatile memory (NVM) cell includes a shared static random access memory cell. The NVM cell utilizes a reverse Fowler-Nordheim tunneling programming technique that, in combination with the shared SRAM cell structure, allows an entire cell array to be programmed at two cycles. A single NVM cell approach with shared SRAM allows a 50% area reduction with an insignificant increase in program time.